| 发明名称 |
Semiconductor structure |
| 摘要 |
A semiconductor structure includes a semiconductor substrate, an active area in the semiconductor substrate, two trenches intersecting the active area to thereby divide the active area into a source region and two drain regions spaced apart from the source region, a saddle-shaped N+/N−/N+ structure in the source region of the active area; and two N+ drain doping regions in the two drain regions, respectively. |
| 申请公布号 |
US9171847(B1) |
申请公布日期 |
2015.10.27 |
| 申请号 |
US201414505490 |
申请日期 |
2014.10.02 |
| 申请人 |
INOTERA MEMORIES, INC. |
发明人 |
Lee Tzung-Han;Shih Neng-Tai;Hu Yaw-Wen |
| 分类号 |
H01L29/66;H01L27/108;H01L27/088;H01L29/08;H01L29/423;H01L29/49 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor structure, comprising:
a semiconductor substrate; an active area in the semiconductor substrate; two trenches intersecting the active area to thereby divide the active area into a source region and two drain regions spaced apart from the source region; a saddle-shaped N+/N−/N+ structure in the source region of the active area; and two N+ drain doping regions in the two drain regions, respectively. |
| 地址 |
Hwa-Ya Technology Park Kueishan, Taoyuan TW |
