Thin film transistor and method for manufacturing the same, and display device

摘要

A method for manufacturing a thin film transistor according to the present disclosure may include the following steps of: performing a two-step etching on an active layer such that part of the active layer is consistent with a source-drain electrode layer, and etching the active layer within a photoresist-removed-area to form an active layer tail; ashing a photoresist layer such that a contour of the photoresist layer is consistent with that of the source-drain electrode layer; further etching the source-drain electrode layer to form a source-drain electrode layer pattern including a source electrode and a drain electrode, and etching off a doped semiconductor layer between the source electrode and the drain electrode, and meanwhile etching off the active layer tail.

主权项

1. A method for manufacturing a thin film transistor, comprising the following steps of:
S1. forming an active layer and a source-drain electrode layer; S2. coating a photoresist layer on the source-drain electrode layer, exposing and developing a substrate coated with the photoresist layer to form a photoresist pattern comprising a photoresist-remained area, a photoresist-half-remained area and a photoresist-removed area; S3. etching by using the photoresist pattern as a mask, and etching off the source-drain electrode layer within the photoresist-removed area; S4. performing a two-step etching on the active layer, wherein the two-step etching comprises a first etching, which makes a contour of the active layer below the source-drain electrode layer covered by the photoresist layer consistent with that of the source-drain electrode layer; and a second etching, which etches the active layer within the photoresist-removed area and ensures a longitudinal etching contour of the active layer, and forms an active layer tail; and S5. ashing the photoresist layer such that the contour of the photoresist layer becomes consistent with that of the source-drain electrode layer; etching the source-drain electrode layer by using the photoresist pattern as a mask to form a source-drain electrode pattern comprising a source electrode and a drain electrode, and etching off a doped semiconductor layer between the source electrode and the drain electrode, and meanwhile etching off the active layer tail.