| 发明名称 |
VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME, AND OPERATING METHOD THEREOF |
| 摘要 |
A voltage generation circuit may include: a comparison unit configured to compare a reference voltage and a feedback voltage and output a comparison signal to a node; an output unit configured to generate an internal voltage and the feedback voltage according to a voltage level applied to the node; and a control unit configured to discharge the node when a level of the internal voltage drops to less than a preset level. |
| 申请公布号 |
US2016275997(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201514727053 |
申请日期 |
2015.06.01 |
| 申请人 |
SK hynix Inc. |
发明人 |
JIN Hyun Jong |
| 分类号 |
G11C5/14;G05F1/625 |
主分类号 |
G11C5/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A voltage generation circuit comprising:
a comparison unit configured to compare a reference voltage and a feedback voltage and output a comparison signal to a node; an output unit configured to generate an internal voltage and the feedback voltage according to a voltage level applied to the node; and a control unit configured to discharge the node when a level of the internal voltage drops to less than a preset level. |
| 地址 |
Icheon-si Gyeonggi-do KR |
