| 发明名称 |
PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT |
| 摘要 |
A piezoelectric element includes a first electrode formed on a substrate, a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO3-type perovskite structure represented by the following formula (1); and a second electrode formed on the piezoelectric layer, in which a seed layer including a complex oxide with an ABO3 perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.;(KX,Na1-X)NbO3 (1) |
| 申请公布号 |
US2016284969(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615078236 |
申请日期 |
2016.03.23 |
| 申请人 |
Seiko Epson Corporation |
发明人 |
SUMI Koji;KOBAYASHI Tomokazu;KITADA Kazuya |
| 分类号 |
H01L41/047;H01L41/253;H01L41/25;H01L41/314;H01L41/083;H01L41/18 |
主分类号 |
H01L41/047 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A piezoelectric element, comprising:
a first electrode formed on a substrate; a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO3-type perovskite structure represented by the following formula (1); and a second electrode formed on the piezoelectric layer, wherein a seed layer including a complex oxide with an ABO3-type perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.
(KX,Na1-X)NbO3 (1) |
| 地址 |
Tokyo JP |
