发明名称 SEMICONDUCTOR SUBSTRATE STRUCTURE, SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
摘要 The present disclosure relates to a semiconductor substrate structure, semiconductor package and method of manufacturing the same. The semiconductor substrate structure includes a conductive structure and a dielectric structure. The conductive structure has a first conductive surface and a second conductive surface opposite to the first conductive surface. The dielectric structure covers at least a portion of the conductive structure, and has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The first conductive surface does not protrude from the first dielectric surface, and the second conductive surface is recessed from the second dielectric surface. The dielectric structure includes, or is formed from, a photo-sensitive resin, and the dielectric structure defines a dielectric opening in the second dielectric surface to expose a portion of the second conductive surface.
申请公布号 US2016284659(A1) 申请公布日期 2016.09.29
申请号 US201514667317 申请日期 2015.03.24
申请人 Advanced Semiconductor Engineering, Inc. 发明人 CHEN Tien-Szu;Chen Kuang-Hsiung;Wang Sheng-Ming;Lee Yu-Ying
分类号 H01L23/00;H05K1/11;H05K3/10;H01L23/31 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor substrate structure, comprising: a conductive structure having a first conductive surface and a second conductive surface opposite to the first conductive surface; and a dielectric structure covering at least a portion of the conductive structure, and having a first dielectric surface and a second dielectric surface opposite to the first dielectric surface, wherein the first conductive surface does not protrude from the first dielectric surface, the second conductive surface is recessed from the second dielectric surface, wherein the dielectric structure includes, or is formed from, a cured photo-sensitive resin, and the dielectric structure defines a dielectric opening in the second dielectric surface to expose a portion of the second conductive surface.
地址 Kaosiung TW