Non-Volatile Resistance-Switching Thin Film Devices

摘要

Disclosed herein are resistive switching devices having, e.g., an amorphous layer comprised of an insulating aluminum-based or silicon-based material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating aluminum-based or an silicon-based material and a conducting material. Also disclosed herein are methods for switching the resistance of an amorphous material.

主权项

1. A resistive device, comprising:
at least one amorphous layer that comprises: a composition comprising: an electrically insulating composition that comprises N and Al, N and Si, or N and both Al and Si; an electrically conducting composition that comprises (a) a metal M, wherein M comprises Pt, Pd, Ni, W, Au, Ag, Cu, Al, Rh, Re, Ir, Os, Ru, Nb, Ti, Zr, Hf, V, Ta, Cr, Mo, Mn, Tc, Fe, Co, Zn, Ga, In, Cd, Hg, Tl, Sn, Pb, Sb, Bi, Be, Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, (b) a conducting metal (Me) nitride, MeNx, wherein x is in the range of from about 0.5 to about 3, or any combination of (a) and (b), and wherein the electrically conducting composition comprises from about 1 percent to about 40 percent by molar percentage of the amorphous layer, wherein the molar percentage of the electrically conducting composition is defined as (% M+% Me)/(% Al+Si %+% M+% Me)×100, according to the M and Me present in the electrically conducting composition and Al and Si present in the electrically insulating composition; and at least two electrodes in electrical contact with one another via the amorphous layer.