发明名称 |
Semiconductor Device |
摘要 |
To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film. |
申请公布号 |
US2016293773(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201615175595 |
申请日期 |
2016.06.07 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Sakakura Masayuki;Suzawa Hideomi;Hanaoka Kazuya |
分类号 |
H01L29/786;H01L29/66;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Kanagawa-ken JP |