发明名称 Semiconductor Device
摘要 To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film.
申请公布号 US2016293773(A1) 申请公布日期 2016.10.06
申请号 US201615175595 申请日期 2016.06.07
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Sakakura Masayuki;Suzawa Hideomi;Hanaoka Kazuya
分类号 H01L29/786;H01L29/66;H01L29/04 主分类号 H01L29/786
代理机构 代理人
主权项 1. (canceled)
地址 Kanagawa-ken JP
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