| 摘要 |
FIELD: computer engineering.SUBSTANCE: method for writing to a magnetic random-access memory (MRAM) cell using a thermally assisted write operation, comprising a magnetic tunnel junction, formed from a memory layer having magnetisation memory; reference layer having reference magnetisation, and a tunnel barrier layer, located between read and memory layers; and a current line which is electrically connected with said magnetic tunnel junction; wherein method includes passing heating current via magnetic tunnel junction for heating magnetic tunnel junction; passing field current for switching storage magnetisation in written direction according to polarity of field current, wherein value of heating current is such that it acts as a spin polarised current and causes adjustment of spin transfer on storage magnetisation; and heating current polarity is such that it causes adjustment of spin transfer on storage magnetisation in said written direction.EFFECT: low field current.6 cl, 4 dwg |
