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发明名称
Verfahren und Vorrichtung zur Programmierung eines nichtflüchtigen Halbleiterspeichers mit Zellen in NAND-Struktur
摘要
申请公布号
DE19612666(C2)
申请公布日期
1998.10.15
申请号
DE19961012666
申请日期
1996.03.29
申请人
SAMSUNG ELECTRONICS CO. LTD., SUWON, KYUNGKI, KR
发明人
JUNG, TAE-SUNG, GUNPO, KR
分类号
G11C17/00;G11C16/02;G11C16/04;G11C16/08;G11C16/10;(IPC1-7):G11C16/04
主分类号
G11C17/00
代理机构
代理人
主权项
地址
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