| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring formation method by which side etching of a copper wiring pattern can be suppressed, and to provide an etchant for use in the wiring formation method.SOLUTION: The wiring formation method of the present invention includes bringing an etchant into contact with a part of a copper layer (3) of a laminated plate (100) in which the copper layer (3) are laminated on a substrate (1), etching the part of the copper layer (3), thereby forming a copper wiring pattern (7). The copper layer (3) has a thickness of 1.5 μm. The etchant is composed of an acidic aqueous solution containing 0.1-3 wt.% of cupric ions, 0.1-30 wt.% of halide ions, and 0.05-20 wt.% of polyalkylene glycol. In the wiring formation method, when T°C denotes the temperature at which the etchant begins getting cloudy, the temperature of the etchant is set to be (T-10)°C or larger when the copper layer (3) is etched. |
