发明名称 MANGANESE- AND NIOBIUM-DOPED PZT BASED PIEZOELECTRIC MATERIAL FILM
摘要 PROBLEM TO BE SOLVED: To provide a Mn- and Nb-doped PZT based piezoelectric material film high in piezoelectric constant, low in dielectric constant, and superior in stability after a polarization process.SOLUTION: A Mn- and Nb-doped PZT based piezoelectric material film comprises a Mn- and Nb-doped complex metal oxide. In the film, metal atoms' ratio (Pb:Mn:Nb:Zr:Ti) satisfies (0.98-1.12):(0.002-0.056):(0.002-0.056):(0.40-0.60):(0.40-0.60). If the total of Mn and Nb metal atoms' ratios is one (1), the proportion of Mn is 0.20-0.80. If the total of Zr and Ti metal atoms' ratios is one (1), the proportion of Zr is 0.40-0.60. If the total of Mn, Nb, Zr and Ti metal atoms' ratios is one (1), the total proportion of Zr and Ti is 0.9300-0.9902.
申请公布号 JP2015192009(A) 申请公布日期 2015.11.02
申请号 JP20140067840 申请日期 2014.03.28
申请人 MITSUBISHI MATERIALS CORP 发明人 DOI TOSHIHIRO;SAKURAI HIDEAKI;SOYAMA NOBUYUKI
分类号 H01L41/187;C04B35/491;H01L41/09;H01L41/113;H01L41/318 主分类号 H01L41/187
代理机构 代理人
主权项
地址