发明名称 |
MOS TRANSISTOR AND A METHOD OF MANUFACTURING A MOS TRANSISTOR |
摘要 |
The MOS transistor (1) of the invention comprises a gate electrode (10), a channel region (4), a drain contact region (6) and a drain extension region (7) mutually connecting the channel region (4) and the drain contact region (6). The MOS transistor (1) further comprises a shield layer (11) which extends over the drain extension region (7) wherein the distance between the shield layer (11) and the drain extension region (7) increases in a direction from the gate electrode (10) towards the drain contact region (6). In this way the lateral breakdown voltage of the MOS transistor (1) is increased to a level at which the MOS transistor (1) may fulfill the ruggedness requirement for broadcast applications for a supply voltage higher than that used in base station applications. |
申请公布号 |
WO2007069188(A3) |
申请公布日期 |
2007.12.13 |
申请号 |
WO2006IB54753 |
申请日期 |
2006.12.12 |
申请人 |
NXP B.V.;THEEUWEN, STEPHAN JO CECILE HENRI;DE_BOET, JOHANNES ADRIANUS MARIA;KLAPPE, JOS |
发明人 |
THEEUWEN, STEPHAN JO CECILE HENRI;DE_BOET, JOHANNES ADRIANUS MARIA;KLAPPE, JOS |
分类号 |
H01L29/78;H01L21/336;H01L29/40;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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