| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning agent for use in a cleaning process after the planarizing polishing process in a semiconductor device manufacturing process capable of effectively removing the organic residue and/or particles etc. existing on the surface of the semiconductor device, particularly on the surface of the semiconductor device having copper wiring thereon without subjecting the copper wiring to corrosion and/or oxidation, and to provide a cleaning method of the semiconductor device using it. SOLUTION: The cleaning agent is used after the chemical-mechanical polishing process in the semiconductor device manufacturing process, and contains (A) an organic acid and (B) a clathrate compound. Cyclodextrin etc. is preferable as the clathrate compound. COPYRIGHT: (C)2008,JPO&INPIT
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