MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing effect of plasma damage on a semiconductor element in manufacturing. SOLUTION: The manufacturing method includes a process for forming the semiconductor element on a semiconductor substrate, and a process for forming a film on the semiconductor element by CVD treatment using microwave plasma in which a microwave is a plasma source, an electron temperature of plasma is lower than 1.5 eV and an electron density of the plasma is higher than 1×1011cm-3in the vicinity of a surface of the semiconductor substrate. COPYRIGHT: (C)2009,JPO&INPIT