发明名称 |
III-NITRIDE SEMICONDUCTOR FABRICATION |
摘要 |
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
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申请公布号 |
WO2007041595(A3) |
申请公布日期 |
2009.04.23 |
申请号 |
WO2006US38678 |
申请日期 |
2006.10.03 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION;HE, ZHI;BEACH, ROBERT |
发明人 |
HE, ZHI;BEACH, ROBERT |
分类号 |
H01L21/28;H01L21/3205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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