| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor where restoration time in an inverse direction is short. SOLUTION: One portion of a first conductivity single crystal layer 12 for composing a drain region 14 of a transistor is set to be a rectifying region 13, a Schottky electrode 45 for forming a Schottky junction with the rectifying region 13 is arranged, and the pn junction between a base diffusion region 15a and the drain region 14 is connected to the Schottky key junction in parallel. The pn junction is clamped by a low forward continuity voltage of the Schottky junction and no current flows. The rectifying region 13 is sandwiched between second conductivity reverse blocking regions 33b. When the Schottky junction is subjected to backward biasing, the pn junction between the reverse blocking region 33b and the rectifying region 13 is subjected to backward biasing and the Schottky junction is covered with the depletion layer of the pn junction, thus increasing a breakdown voltage in an inverse direction. COPYRIGHT: (C)2004,JPO&NCIPI |
