| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material and a pattern forming method capable of reducing generation of outgas from a resist film in EUV exposure and preventing generation of blob defects.SOLUTION: The resist material includes a polymeric compound as a base resin showing increase in alkali solubility by an acid and a polymeric compound as a polymeric additive having a repeating unit that is derived from styrene having both of a hydroxy group and a fluorine atom or a trifluoromethyl group. A photoresist film formed by using the above resist material can reduce generation of outgas from a resist film in EUV exposure, can reduce edge roughness (LWR) after development and can prevent generation of blob defects on a developed resist film as the resist film surface is converted into hydrophilic. |
