| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method and a resist composition from which a pattern having fewer development defects can be formed.SOLUTION: The resist composition is used for a specified pattern forming method and comprises the following resin, a hydrophobic resin having a fluorine atom or a silicon atom, and a solvent comprising a specified component. The resin contains a repeating unit (P) having a group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group, contains neither a fluorine atom nor a silicon atom, and shows decrease in the solubility with a developing solution containing an organic solvent by an action of an acid; and in the resin, the repeating unit (P) contains no lactone structure, and the group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group is a group expressed by at least one of specified general formulae. The compounding rate of the resin showing decrease in the solubility with a developing solution containing an organic solvent by an action of an acid is 60 to 95 mass% in the total solid content. |
