| 摘要 |
A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact. |
| 主权项 |
1. A semiconductor device comprising:
a substrate including first and second active patterns formed thereon, the first and second active patterns extending in a first direction parallel to a top surface of the substrate; a first gate electrode intersecting the first and second active patterns, the first gate electrode extending in a second direction intersecting the first direction; first and second source/drain regions provided in upper portions of the first and second active patterns, respectively, at one side of the first gate electrode, wherein the first and second source/drain regions are spaced apart from each other in the second direction; and an active contact on the first source/drain region and electrically connected to the first source/drain region, wherein the active contact comprises: a first sub-contact overlapping with the first source/drain region in plan view; and a second sub-contact provided between the first and second source/drain regions in plan view, wherein the second sub-contact includes a vertical extension vertically extending toward the substrate, and wherein a bottom surface of the vertical extension extends toward the substrate beyond a bottom surface of the first sub-contact. |
