| 发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE |
| 摘要 |
Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns. |
| 申请公布号 |
US2016293417(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514965255 |
申请日期 |
2015.12.10 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Min Ju;Na Haisub;Yun Hyojin;Kim Kyoungseon;Kim Su Min;Kim Hyunwoo;Park Su Min;Han So-Ra |
| 分类号 |
H01L21/033;H01L21/027 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming an anti-reflection layer on a lower layer; forming photoresist patterns on the anti-reflection layer; forming protection patterns to cover the photoresist patterns, respectively; etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns; forming spacers to cover sidewalls of the anti-reflection patterns; and removing the anti-reflection patterns. |
| 地址 |
Suwon-si KR |
