MEMORY UNIT WITH VOLTAGE PASSING DEVICE

摘要

A memory cell includes a floating gate transistor, a word line transistor, a first capacitance element, and a second capacitance element. The floating gate transistor has a first terminal for receiving a bit line signal, a second terminal, and a floating gate. The word line transistor has a first terminal coupled to the second terminal of the floating gate transistor, a second terminal for receiving a third voltage, and a control terminal for receiving a word line signal. A voltage passing device is for outputting a second voltage during an inhibit operation and a first voltage during a program operation or an erase operation. The first capacitance element is coupled to the first voltage passing device and the floating gate, and for receiving a first control signal. The second capacitance element is for receiving at a second control signal.

主权项

1. A memory unit, comprising:
a first voltage passing device configured to output voltages according to operations of the memory unit; and a first memory cell comprising:
a first floating gate transistor having a first terminal configured to receive a first bit line signal, a second terminal, and a floating gate; anda first capacitance element having a first terminal coupled to the first voltage passing device, a second terminal, a control terminal coupled to the floating gate of the first floating gate transistor, and a body configured to receive a first control signal; wherein: the first capacitance element and the first voltage passing device are disposed in a first N-well; the first terminal of the first capacitance element receives a first voltage outputted from the first voltage passing device during a program operation or an erase operation of the first memory cell and receives a second voltage outputted from the first voltage passing device during an inhibit operation of the first memory cell; and the first voltage is greater than the second voltage.