发明名称 |
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH UNEVEN GATE STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
A FinFET device structure is provided. The FinFET device structure includes an isolation structure formed over a substrate and a fin structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure, and the first gate structure has a first width in a direction parallel to the fin structure, the second gate structure has a second width in a direction parallel to the fin structure, and the first width is smaller than the second width. The first gate structure includes a first work function layer having a first height. The second gate structure includes a second work function layer having a second height and a gap between the first height and the second height is in a range from about 1 nm to about 6 nm. |
申请公布号 |
US2016343706(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201514737066 |
申请日期 |
2015.06.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHANG Chai-Wei;CHANG Che-Cheng;WU Po-Chi;CHAO Yi-Cheng |
分类号 |
H01L27/088;H01L21/8234;H01L29/66;H01L21/3213;H01L29/06;H01L29/423 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsin-Chu TW |