| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method in which useful CuO film (deposition film) or CuO film composed of a single crystal phase from CuO as a target can be selectively formed and further, on the formation of the CuO film, the film quality control of the CuO film can be easily performed.SOLUTION: CuO is used as a target, charging power for plasmatizing Ar and the total pressure of gas including Ar are set in such a manner that sputtering particles from the CuO are successively changeable into CuO, CuOand CuO in accordance with the increase in the flow rate ratio of O, and then, the flow rate ratio of Ois regulated under the charging power and the total pressure. In this way, either useful CuO film or CuO film composed of a single crystal phase can be adequately formed in a selective way. Further, on the formation of the CuO film, resistivity (carrier density) is regulated in a wide range by the regulation of the Oflow rate ratio, and the change of the film quality properties of the CuO film can be easily performed. |
