METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

摘要

Disclosed is a method for producing a silicon carbide substrate wherein a major surface on which a semiconductor layer is formed has a step-terrace structure composed of a flat terrace and a step. This method for producing a silicon carbide substrate is characterized in that the plane direction of a major surface (1) of a raw material substrate is inclined to the (0001) surface by an angle of from 0.03° to 1°, and a hydrogen gas etching is performed at 1250-1700°C. Also disclosed is an SiC substrate, which has only a few spiral pits and is excellent in surface flatness.