SEMICONDUCTOR MODULATOR AND OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor modulator improving a high-temperature operation characteristic. SOLUTION: The semiconductor modulator has such a configuration that an InGaAs/InAlAs quantum well layer 3 is formed by arranging an InAlAs barrier layer which is lattice-matched with a substrate on both sides of an InGaAs compressively-strained quantum well layer which is formed as light absorption layer, on a semiconductor crystal InGaAs substrate 1 of ternary mixed crystal. COPYRIGHT: (C)2008,JPO&INPIT