| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate in which the semiconductor substrate is manufactured without performing a polishing stage nor ion implantation and heat-treating processes from the reverse surface after thin film formation to improve the manufacturing yield and a thin film of ≤100 μm in thickness as the substrate can be achieved when manufacturing the semiconductor substrate, such as an IGBT and a power MOSFET, which requires a process of making the substrate extremely thin. SOLUTION: After at least a process of forming a porous layer on a surface of a silicon single-crystal substrate is performed, a process of forming an epitaxial silicon layer on a surface of the porous layer is performed and then a process of forming an element on a surface of the epitaxial silicon layer is carried out, a process of separating the epitaxial silicon layer and silicon single-crystal substrate at the porous layer is performed, and then a process of forming an electrode on a separated surface of the epitaxial silicon layer separated from the silicon single-crystal substrate is carried out. COPYRIGHT: (C)2009,JPO&INPIT |
