LOW-VOLATILITY COMPOUNDS FOR USE IN FORMING DEPOSITED LAYERS

摘要

The present invention relates to the use of low-vofatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of fow vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.