| 摘要 |
PROBLEM TO BE SOLVED: To obtain a power semiconductor device having high voltage withstanding with a small chip area.SOLUTION: In a semiconductor device, a player 23 is not formed in a region between a cell region end trench 24A which is the most right side trench 24 out of trenches 24 in a cell region X and an outer peripheral region end trench 31A which is the most left trench 31 out of trenches 31 in an outer peripheral region Y, and only an nlayer 22 exists in the region. In the case where L<M, an end D on the underside of a depletion layer can be flattened to a further degree. That is, even in the case where L<M, a shape of the end D on the underside of the depletion layer can be gentle. Because of this, a distance L between the cell region X and the outer peripheral region Y can be decreased without causing deterioration in voltage withstanding. That is, a chip can be downsized.SELECTED DRAWING: Figure 4 |
