发明名称 METHODOLOGY FOR PATTERN DENSITY OPTIMIZATION
摘要 The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.
申请公布号 US2016275232(A1) 申请公布日期 2016.09.22
申请号 US201615170026 申请日期 2016.06.01
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Wang Hung-Chun;Chih Ming-Hui;Wu Ping-Chieh;Wu Chun-Hung;Liu Wen-Hao;Huang Cheng-Hsuan;Tsai Cheng-Kun;Huang Wen-Chun;Liu Ru-Gun
分类号 G06F17/50;G03F1/36 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method of data preparation, comprising: performing an initial data preparation process on an IC design comprising a graphical representation of a layout used to fabricate an integrated chip, wherein the initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design; identifying one or more low-pattern-density areas of the modified IC design using a local density checking element; and adding one or more dummy shapes within the one or more low-pattern-density areas using a dummy shape insertion element, wherein the one or more dummy shapes are separated from the modified shapes by a non-zero space.
地址 Hsin-Chu TW