发明名称 |
SUBSTRATE DIVIDING METHOD |
摘要 |
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness. |
申请公布号 |
US2016343618(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615226417 |
申请日期 |
2016.08.02 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
FUJII Yoshimaro;FUKUYO Fumitsugu;FUKUMITSU Kenshi;UCHIYAMA Naoki |
分类号 |
H01L21/78;H01L21/683;H01L23/00;H01L21/306;H01L21/268;H01L21/304 |
主分类号 |
H01L21/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Hamamatsu-shi JP |