发明名称 SUBSTRATE DIVIDING METHOD
摘要 A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
申请公布号 US2016343618(A1) 申请公布日期 2016.11.24
申请号 US201615226417 申请日期 2016.08.02
申请人 HAMAMATSU PHOTONICS K.K. 发明人 FUJII Yoshimaro;FUKUYO Fumitsugu;FUKUMITSU Kenshi;UCHIYAMA Naoki
分类号 H01L21/78;H01L21/683;H01L23/00;H01L21/306;H01L21/268;H01L21/304 主分类号 H01L21/78
代理机构 代理人
主权项
地址 Hamamatsu-shi JP