METHODS AND APPARATUS FOR FORMING A RESIST ARRAY USING CHEMICAL MECHANICAL PLANARIZATION

摘要

Methods, apparatus, and systems are provided for forming a resist array on a material to be patterned using chemical-mechanical planarization. The resist array may include an arrangement of two different materials that are adapted to react to activation energy differently relative to each other to enable selective removal of only one of the materials (e.g., one is reactive and the other is not reactive; one is slightly reactive and the other is very reactive; one is reactive in one domain and the other in an opposite domain). The first material may be disposed as isolated nodes between the second material. A subset of nodes may be selected from among the nodes in the array and the selected nodes may be exposed to activation energy to activate the nodes and create a mask from the resist array. Numerous additional aspects are disclosed.

主权项

1. A method for patterning material on a substrate, the method comprising:
forming a resist array on the material to be patterned using chemical-mechanical polishing (CMP), the resist array including an arrangement of a first material and a second material, the first material being disposed as isolated nodes between the second material, wherein the first and second materials are adapted to react to activation energy differently relative to each other to enable selective removal of one of the first and second materials; selecting a subset of nodes from among the nodes in the array; exposing the selected nodes to activation energy to activate the nodes and create a mask from the resist array; and etching the material to be patterned using the mask created from the resist array.