STRESS PATTERNS TO DETECT SHORTS IN THREE DIMENSIONAL NON-VOLATILE MEMORY

摘要

A non-volatile storage system includes a three dimensional structure comprising vertical columns of memory cells and a managing circuit in communication with the vertical columns The managing circuit applies one or more patterns of stress voltages to the vertical columns, with different voltages applied to each vertical column of pairs of adjacent vertical columns being tested for shorts. The managing circuit tests for a short in the pairs of adjacent vertical columns after applying the one or more patterns of stress voltages. In one embodiment, the test may comprise programming a memory cell in each vertical column with data that matches the pattern of stress voltages, reading from the memory cells and determining whether data read matches data programmed. The applying of the stress voltages and the testing can be performed as part of a test during manufacturing or in the field during user operation.

主权项

1. An apparatus, comprising:
a plurality of non-volatile memory cells arranged in a three dimensional structure comprising a plurality of vertical columns with each vertical column of the plurality including multiple memory cells; and a managing circuit in communication with the vertical columns, the managing circuit is configured to apply one or more patterns of stress voltages to the plurality of vertical columns of non-volatile memory cells with different voltages applied to each vertical column of pairs of adjacent vertical columns being tested for shorts, the managing circuit is configured to test for a defect in the pairs of adjacent vertical columns after applying the one or more patterns of stress voltages.