N0N-VOLATILE MEMORY FOR HIGH INTEGRATION AND ITS MANUFACTURING METHOD

摘要

PURPOSE: The action power can be reduced with the program by improving the coupling ratio surprisingly with reducing the area of the unit cell and increasing the capacitance of inter-poly dielectric layer between floating gate control gate. And the field combustion film can be thickened by improving etching loss by the over etching of the field combustion and etching floating gate and control gate without misalignment. CONSTITUTION: Non-volatile memory unit cell which has the program possesses source/drain which is composed of the second surreptitious use of electricity style on the first surreptitious use of electricity style semiconductor board with the field oxidation film, the first dielectric layer on the channel area which is formed between source/drain areas, the floating gate which is on the first dielectric layer, the control gate which wraps 4 sides on the direction of the word line and beat line or the floating gate upper part.