METAL CONTAMINANT REMOVING METHOD FORMED ON A SURFACE OF SILICON SUBSTRATE

摘要

PURPOSE: A method for removing metal contaminant formed on surface of silicon substrate is provided to easily remove metal contaminant without damage of the silicon substrate. CONSTITUTION: The method comprises the steps of an UV(ultraviolet)/O3 cleaning(S100) and an RHP(remote hydrogen plasma) cleaning(S200). The UV/O3 cleaning step(S100) further comprises the sub-steps of irradiating UV and O3 to a silicon substrate having metal contaminant; exiting the metal contaminant to an atom state using the UV light and exiting oxygen molecular to atom state according to the ozone(O3); and generating a metal oxide by reacting the exited metal contaminant and the oxygen atom. The RFP cleaning step(S200) further comprises the sub-steps of generating a hydrogen atom from the hydrogen plasma; creating a hydride by reaction the metal oxide and the hydrogen atom; and removing the hydride by lift-off.