| 摘要 |
PURPOSE: A method of improving a contact processing margin by preventing the generation of leakage currents is disclosed. CONSTITUTION: The method comprises the steps of: forming a device isolation film(23) for defining a active region on a predetermined regions of a semiconductor substrate(21); forming a gate electrode(27) of MOS transistor, a lightly doped drain region, and a spacer(31) on the active region; forming a intrinsic semiconductor layer on the entire surface of the substrate with the spacers formed thereon; forming a first contact hole for simultaneously exposing the lightly doped drain region and the device isolation film adjacent to thereto by patterning the intrinsic semiconductor layer; forming a heavily doped impurity layer having a first depth deeper than the lightly doped drain region in a lower portion the semiconductor layer and a second depth deeper than the first depth in the substrate exposed by the first contact hole; removing the intrinsic semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate with the semiconductor layer removed therefrom; and forming a second contact hole in the position identical to the first contact hole by patterning the insulating layer. Thereby, the generation of leakage currents can be prevented, so that the contact processing margin of the semiconductor device can be increased.
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