MAGNETORESISTIVE EFFECT SENSOR, METHOD FOR MANUFACTURING THE SAME, MAGNETIC RESISTANCE DETECTING SYSTEM AND MAGNETIC STORAGE SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a manetoresistive effect element, a reproducing head and a recording and reproducing system, excellent in values of reproducing output, S/N and a bit error rate compared with that of a conventional structure. SOLUTION: A magnetoresistive effect sensor 30, which uses a magnetoresistive effect film 20 making basic constitution of combination of a free layer 3, a barrier layer 4 formed on the free layer 3, and a fixed layer 5 formed on the barrier layer 4, using the shielding type magnetoresistive effect element 25 of type in which sense current flows substantially perpendicularly to the magnetoresistive effect film and using amorphous material or a micro- crystal material on a lower shield 1 is shown.