| 摘要 |
PROBLEM TO BE SOLVED: To execute burn-in test using a simple-structured probe card without requiring a high current. SOLUTION: A power line 7a for feeding a stress voltage in a burn-in test and a GND line 7b for feeding the ground potential are formed on each of dicing regions 5 between semiconductor chips 3, 3 on a semiconductor wafer 1. The power line 7a and the GND line 7b are cut off at the dicing regions 5a, 5b, and a plurality of semiconductor chips are divided in four groups according to the connecting condition to these lines 7a, 7b. Probe needles of a probe card are disposed, corresponding to power pads and GND pads of the semiconductor chips (5), (6), (7) and (8), and a stress voltage and the ground potential are fed respectively to the power pads and the ground pads of the semiconductor chips (5), (6), (7) and (8) to apply the stress voltage every group.
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