| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method by which reliable underfill compositions can be formed without any void while solder bump positioning is easy. <P>SOLUTION: A first underfill composition is applied on a surface of a silicon wafer in two layers, a high-concentration filler is mixed with a first underfill composition enclosing a solder bump side surface portion, and then the applied first underfill composition is brought into a B-stage to form a layer of the first underfill composition having a thickness ranging from 0.5 to 1.0 times the height of the solder bump. A second underfill composition containing a flux component is applied thereupon and the applied second underfill composition is brought into a B-stage to form a layer wherein a total thickness including the layer of the first underfill composition ranges from 1.0 to 1.3 times the height of the solder bump. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
