| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a Q value of an inductor, and responding to a request for miniaturization of the semiconductor device. <P>SOLUTION: In this semiconductor device 1, a copper interconnect layer 14 that has an interconnect including an inductor 141 with the interconnect including the inductor 141 buried in an interconnect trench formed in an insulating layer 21, and copper interconnect layers 11-13, which include no inductor and are buried in interconnect trenches formed in other insulating layers 15, 17 and 19, respectively, are stacked together. An average grain size of the inductor 141 is larger than average grain sizes of the interconnects in the copper interconnect layers 11-13 that contain no inductor. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
