| 发明名称 |
METAL FOIL FOR ELECTROMAGNETIC SHIELDING, ELECTROMAGNETIC SHIELDING MATERIAL, AND SHIELDING CABLE |
| 摘要 |
A metal foil for electromagnetic shielding, comprising: a metal foil base, an Sn—Ni alloy layer formed on one or both surfaces of the base, and an oxide layer formed on a surface of the Sn—Ni alloy layer, wherein the Sn—Ni alloy layer includes 20 to 80% by mass of Sn and has a thickness of 30 to 500 nm, and wherein when an analysis in a depth direction is carried out by an XPS being the depth from an outermost surface as X nm, and an atomic percentage (%) of Sn is represented by ASn (X), an atomic percentage (%) of Ni is represented by ANi (X), an atomic percentage (%) of oxygen is represented by AO(X), and X is defined to be XO when AO(X)=0, 30 nm=>XO=>0.5 nm, and 0.4=>∫ANi(X)dx/∫ASn(X)dx=>0.05 in a section [0, X0] is satisfied. |
| 申请公布号 |
US2016165768(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414902188 |
申请日期 |
2014.02.20 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
Tanaka Koichiro |
| 分类号 |
H05K9/00 |
主分类号 |
H05K9/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A metal foil for electromagnetic shielding, comprising:
a metal foil base, an Sn—Ni alloy layer formed on one or both surfaces of the base, and an oxide layer formed on a surface of the Sn—Ni alloy layer, wherein the Sn—Ni alloy layer includes 20 to 80% by mass of Sn and has a thickness of 30 to 500 nm, and wherein when an analysis in a depth direction is carried out by an XPS being the depth from an outermost surface as X nm, and an atomic percentage (%) of Sn is represented by ASn (X), an atomic percentage (%) of Ni is represented by ANi (X), an atomic percentage (%) of oxygen is represented by AO (X), and X is defined to be XO when AO (X)=0, 30 nm=>XO=>0.5 nm, and 0.4=>∫ANi(X)dx/∫ASn(X)dx=>0.05 in a section [0, X0] is satisfied. |
| 地址 |
Tokyo JP |
