INTEGRATED CIRCUIT DEVICE AND METHOD FOR FORMING THE SAME

摘要

The invention provides an integrated circuit device. The integrated circuit device includes a semiconductor substrate. An isolation structure is positioned in the semiconductor substrate. A first electrode and a second electrode are positioned on the semiconductor substrate and coupled to different voltage supplies. The first electrode laterally or parallelly overlaps the second electrode. The first electrode and the second electrode vertically overlap the isolation structure. As a result, leakage current is mitigated or eliminated so that the reliability and performance of the integrated circuit device are improved.

主权项

1. An integrated circuit device, comprising:
a semiconductor substrate; an isolation structure in the semiconductor substrate; and a first electrode and a second electrode on the semiconductor substrate and coupled to different voltage supplies, wherein the first electrode laterally overlaps and the second electrode are parallel.