METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with an insulating layer formed thereon. The method includes forming a gate dielectric layer in the first opening and the second opening. The method includes forming a film over the gate dielectric layer. The method includes forming a first work function metal layer in the first opening. The method includes depositing a second work function metal layer in the first opening and the second opening and in direct contact with the first work function metal layer in the first opening and the film in the second opening. A first deposition rate of the second work function metal layer over the first work function metal layer is greater than a second deposition rate of the second work function metal layer over the film.

主权项

1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate with an insulating layer formed thereon, wherein the insulating layer has a first opening and a second opening; forming a gate dielectric layer in the first opening and the second opening; forming a film over the gate dielectric layer, wherein the film comprises a barrier layer or a metal layer; forming a first work function metal layer in the first opening; and depositing a second work function metal layer in the first opening and the second opening and in direct contact with the first work function metal layer in the first opening and the film in the second opening, wherein a first deposition rate of the second work function metal layer over the first work function metal layer is greater than a second deposition rate of the second work function metal layer over the film.