发明名称 |
Memory Systems and Methods Involving High Speed Local Address Circuitry |
摘要 |
Systems and methods of memory and memory operation are disclosed, such as providing a circuit including a local address driver voltage source for memory decoding. In one exemplary implementation, an illustrative circuit may comprise a first buffer and a capacitor. The first buffer may comprise a power input and a ground input. The capacitor may comprise a first terminal connected to the power input of the first buffer and a second terminal connected to the ground input of the first buffer. When the first buffer draws a current from the power input, at least a portion of the current may be supplied by the capacitor. |
申请公布号 |
US2016196858(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201615068075 |
申请日期 |
2016.03.11 |
申请人 |
GSI TECHNOLOGY, INC. |
发明人 |
CHUANG Patrick;HUANG Mu-Hsiang;SHU Lee-Lean |
分类号 |
G11C8/10;G11C8/06 |
主分类号 |
G11C8/10 |
代理机构 |
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代理人 |
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主权项 |
1. A memory circuit comprising:
a plurality of memory banks; a pre-decoder configured to receive data from and send data to circuitry external to the memory circuit; a data line coupled to the pre-decoder; and a plurality of memory address circuits, each of the memory address circuits being coupled to the data line and to at least one of the memory banks; each memory address circuit comprising:
a first buffer comprising a power input and a ground input; anda capacitor comprising a first terminal connected to the power input of the first buffer and a second terminal connected to the ground input of the first buffer so that when the first buffer draws a current from the power input, at least a portion of the current is supplied by the capacitor. |
地址 |
Sunnyvale CA US |