| 摘要 |
The invention relates to a method for producing a bondable metal coating (1) on a semiconductor substrate (3) for a power semiconductor device, said bondable metal coating (1) having a first metal layer (M1) that is applied to the semiconductor substrate (3), and a second metal layer (M2) that is applied to the first metal layer (M1). The invention also relates to a corresponding bondable metal coating (1). According to the invention, in order to form the second metal layer (M2), a copper metal coat (Cu) is applied to the first metal layer (M1), and a passivation layer (PS) containing aluminum is deposited on the copper metal coat (Cu). |
