| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite substrate having high productivity and capable of suppressing damage on a semiconductor layer due to an external shock.SOLUTION: The composite substrate 1 includes a support substrate 10 composed of an insulating material and having a main part 11 located in the center and a peripheral part 12 located on the periphery, and a semiconductor layer 20 located on an upper surface 11a of the main part 11. Arithmetic average roughness of an upper surface 12a of the peripheral part 12 is larger than that of the upper surface 11a of the main part 11. |
