发明名称 METHOD AND APPARATUS FOR PROTECTING METAL INTERCONNECT FROM HALOGEN BASED PRECURSORS
摘要 A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.
申请公布号 WO2016144433(A1) 申请公布日期 2016.09.15
申请号 WO2016US15754 申请日期 2016.01.29
申请人 APPLIED MATERIALS, INC. 发明人 NAIK, Mehul, B.;MA, Paul, F.;HA, Tae, Hong;GUGGILLA, Srinivas
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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