| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved erasable programmable single-poly nonvolatile memory capable of effectively reducing programming time.SOLUTION: An erasable programmable single-poly nonvolatile memory includes: a floating gate transistor having a floating gate 36, a gate oxide film 362 under the floating gate 36, and a channel region; an erase gate region 75, and an assist gate region. The floating gate 36 is extended to and is adjacent to the erase gate region 75 and the assist gate region. The gate oxide film 362 comprises: a first portion 362a above the channel region of the floating gate transistor; and a second portion 362b above the erase gate region. Thickness of the first portion 362a is different from thickness of the second portion 362b. |
