CELL ARRAY OF NOR TYPE MASK ROM ACCOMPLISHING AFTER PASSIVATION PROGRAMMING AND METHOD FOR MAKING SAME

摘要

PURPOSE: The cell array is to repress programming defect by improving uniformity of impurity which is ion-introduced to channel area of cell transistor when after passivation layer forming, ion is introduced to the channel area to accomplish programming. Method for producing such a NOR type mask ROM is also provided. CONSTITUTION: The cell array comprises a metal pattern of single layer construction formed on semiconductor substrate on which interlayer insulation is formed, an insulation film for flattening which fills a space between the metal patterns and thus is flattened, a passivation layer formed on the insulation layer for flattening. The method forms source/drain as embedding diffusion layer on the semiconductor substrate, and then forms a gate dielectric film and gate pattern perpendicular to the embedding diffusion layer. After interlayer insulation film is deposited on the resulting products, contact hole is perforated to form metal pattern which is connected to the drain area. Then, flattening insulation film is deposited on the resulted product having metal pattern to progress flattening. Next, the insulation film for flattening forms passivation layer on the flattened semiconductor device. Lastly, ion is introduced to the passivated semiconductor substrate to progress ROM code programming.