| 摘要 |
PROBLEM TO BE SOLVED: To provide a method that has a means for easily and rapidly removing a machining damage layer, remaining on the observation surface of a sample for cross-section observation and prepares the sample, capable of precisely executing a two-dimensional carrier distribution measurement. SOLUTION: In the method for preparing a sample piece for cross-section observation of a semiconductor device, having a silicon layer in which impurities are introduced onto a silicon substrate, the cross-section of the semiconductor device is exposed, machining for flattening the cross-section is executed, the sample for cross-section observation is dipped into a strong alkali etching liquid containing alkali metal hydroxide and hydrogen peroxide, is further dipped into a surface-modified liquid, containing hydrochloric acid or ammonium and hydrogen peroxide, and removes the machining damage layer, and forms a uniform silicon oxide film on the surface of the cross-section, in which the machining damage layer has been removed. COPYRIGHT: (C)2007,JPO&INPIT
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