METHOD FOR MANUFACTURING A DUAL GATE DEVICE

摘要

A method for manufacturing a dual gate is provided to simplify manufacturing processes by depositing in-situ a gate insulating layer and a gate electrode in the same equipment. A gate insulating layer(111) made of HfO2 or HfSiO is formed on a semiconductor substrate(110). A hafnium film is deposited on the gate insulating layer. A polysilicon layer is deposited on the hafnium film. By annealing the resultant structure, a hafnium silicide electrode(115) is formed on the gate insulating layer. At the time, the gate insulating layer and the hafnium film are deposited by in-situ using the same equipment.